? semiconductor components industries, llc, 2002 february, 2001 rev. 1 1 publication order number: nzl5v6att1/d nzl5v6att1 sc75 dual common anode zener for esd protection this dual monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. it is intended for use in voltage and esd sensitive equipment such as computers, printers, business machines, communication systems, medical equipment, and other applications. its dual junction common anode design protects four separate lines using only one package. these devices are ideal for situations where board space is at a premium. specification features ? sc75 package allows two separate unidirectional configurations ? low leakage < 1 a @ 3 volt ? breakdown voltage: 5.35.9 volt @ 1 ma ? low capacitance (40 pf typical between terminals) ? esd protection meeting iec6100042 mechanical characteristics ? void free, transfermolded, thermosetting plastic case ? corrosion resistant finish, easily solderable ? package designed for optimal automated board assembly ? small package size for high density applications sc75 case 463 style 4 http://onsemi.com device package shipping ordering information nzl5v6att1 sc75 3000/tape & reel 56 = device marking marking diagram 3 anode cathode 1 2 cathode 56 3 1 2
nzl5v6att1 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) unidirectional (circuit tied to pins 1 and 3 or 2 and 3) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current v br maximum temperature coefficient of v br i f forward current v f forward voltage @ i f z zt maximum zener impedance @ i zt i zk reverse current z zk maximum zener impedance @ i zk unidirectional tvs i pp i f v i i r i t v rwm v c v br v f maximum ratings (t a = 25 c unless otherwise noted) characteristic symbol value unit steady state power 1 diode (note 1) p d 150 mw maximum junction temperature t jmax 150 c operating junction and storage temperature range t j t stg 55 to +150 c esd discharge iec6100042, air discharge iec6100042, contact discharge v pp 15 8 kv lead solder temperature (10 seconds duration) t l 260 c electrical characteristics breakdown voltage v br @ 1 ma (volts) leakage current i rm @ v rm = 3.0 v typical capacitance @ 0 v bias @ 1 mhz max v f @ i f = 10 ma device min nom max ( a) (pf) (v) nzl5v6 5.3 5.6 5.9 1.0 40 1.25 1. only 1 diode under power. for all 4 diodes under power, p d will be 25%. mounted on fr4 board with min pad. t r 0 25 50 75 100 125 150 175 300 250 200 150 100 50 0 figure 1. steady state power derating curve temperature ( c) 0 2040 6080 100 60 50 30 20 10 0 figure 2. 8 x 20 s pulse waveform t, time ( s) p d , power dissipation (mw) % of peak pulse current 40 90 80 70 peak value i rsm @ 8 s half value i rsm /2 @ 20 s pulse width (t p ) is defined as that point where the peak current decay = 8 s t p
nzl5v6att1 http://onsemi.com 3 10 100 1000 100 10 1 figure 3. pulse rating curve t p , pulse width ( s) 0 0.5 1 1.5 5 45 20 5 0 figure 4. capacitance bias voltage (v) p pk , peak power (w) typical capacitance (pf) 1 mhz frequency 40 2.5 2 0.6 1 1.4 1 0.1 0.001 figure 5. forward current versus forward voltage v f , forward voltage (v) 4 4.2 4.4 4.6 6 1 figure 6. clamping voltage versus peak pulse current (reverse direction) v c , clamping voltage (v) i f , forward current (a) i pp , peak pulse current (a) 10 4.8 5 0.01 0.7 0.8 0.9 1.1 1.2 1.3 100 5.2 5.4 note: nonrepetitive surge 3 3.5 4.5 4 10 15 35 25 30 5.6 5.8 1.0 s square wave
nzl5v6att1 http://onsemi.com 4 package dimensions sc75 (sc90, sot416) case 46301 issue b dim min max min max inches millimeters a 0.70 0.80 0.028 0.031 b 1.40 1.80 0.055 0.071 c 0.60 0.90 0.024 0.035 d 0.15 0.30 0.006 0.012 g 1.00 bsc 0.039 bsc h --- 0.10 --- 0.004 j 0.10 0.25 0.004 0.010 k 1.45 1.75 0.057 0.069 l 0.10 0.20 0.004 0.008 s 0.50 bsc 0.020 bsc notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. m 0.20 (0.008) b a b s d g 3 pl 0.20 (0.008) a k j l c h 3 2 1 style 4: pin 1. cathode 2. cathode 3. anode on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. nzl5v6att1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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